Phase transition and bandgap engineering in B1-Al N alloys: DFT calculations and experiments

Author:

Zhang Qifan,Li Qiang,Zhang Weihan,Zhang Haoran,Zheng Feng,Zhang Mingyin,Hu Peng,Wang Mingdi,Tian Zhenhuan,Li Yufeng,Liu Yuhuai,Yun Feng

Funder

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Xi’an Jiaotong University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference74 articles.

1. Ultrawide bandgap semiconductors;Higashiwaki;Appl. Phys. Lett.,2021

2. Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique;Park;J. Vacuum Sci. Technol. A Vacuum Surf. Films,2021

3. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy;Evans;J. Phys.: Condens. Matter,2008

4. Hexagonal boron nitride grown by MOVPE;Kobayashi;J. Cryst. Growth,2008

5. Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure;Kubota;Science,2007

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