Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition-Reference-Cited by-同舟云学术

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Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Published:2020 Issue:25 Volume:8 Page:8457-8465
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Rouf Polla¹²³⁴⁵^ORCID,O’Brien Nathan J.¹²³⁴⁵^ORCID,Buttera Sydney C.⁶⁷⁸⁹,Martinovic Ivan¹²³⁴⁵,Bakhit Babak¹²³⁴⁵,Martinsson Erik¹²³⁴⁵,Palisaitis Justinas¹²³⁴⁵,Hsu Chih-Wei¹²³⁴⁵,Pedersen Henrik¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. Chemistry and Biology

3. Linköping University

4. SE-58183 Linköping

5. Sweden

6. Department of Chemistry

7. Carleton University

8. Ottawa

9. Canada

Abstract

GaN is grown epitaxially on 4H-SiC without buffer layer using ALD with Ga(NMe₂)₃ and NH₃ plasma.

Funder

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02085K

Reference43 articles.

1. GaN, AlN, and InN: A review

2. Growth and properties of single crystalline GaN substrates and homoepitaxial layers

3. Dielectric properties of reactively sputtered gallium nitride films

4. First-principles calculations of effective-mass parameters of AlN and GaN

5. SiC and GaN wide bandgap semiconductor materials and devices

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1. Control polarity of gallium nitride on Si (1 1 1) using atomic layer annealing and thermal atomic layer deposition;Applied Surface Science;2024-12

2. Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features;Materials Science in Semiconductor Processing;2024-04

3. Investigation into the growth mode of GaN thin films on 4H–SiC substrates via plasma-enhanced atomic layer deposition;Vacuum;2024-03

4. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024

5. High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition;Materials Letters;2023-11

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