Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/n-GaN Schottky diode as an interlayer and its chemical and microstructural features
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Published:2024-04
Issue:
Volume:173
Page:108133
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Reddy D. Surya,
Rajagopal Reddy V.ORCID,
Choi Chel-Jong
Cited by
3 articles.
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