Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC-Reference-Cited by-同舟云学术

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Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

Published:1997-11-15 Issue:10 Volume:82 Page:5097-5102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Davydov V. Yu.,Averkiev N. S.,Goncharuk I. N.,Nelson D. K.,Nikitina I. P.,Polkovnikov A. S.,Smirnov A. N.,Jacobson M. A.,Semchinova O. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366310

Reference22 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Raman scattering study of residual strain in GaAs/InP heterostructures

4. Raman scattering study of residual strain in GaAs/InP heterostructures

5. Raman scattering study of residual strain in GaAs/InP heterostructures

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3. Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A₁(LO) and E₂(high) Phonons in a GaInN/GaN Heterostructure;physica status solidi (b);2024-04-27

4. Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy;Scientific Reports;2024-02-09

5. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy;Thin Solid Films;2024-02

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