Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

Published:2024-02 Issue: Volume:791 Page:140246
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Malin Timur^ORCID,Maidebura Yan^ORCID,Mansurov Vladimir,Gavrilova Tatyana,Gutakovsky Anton^ORCID,Vdovin Vladimir,Ponomarev Sergey^ORCID,Loshkarev Ivan^ORCID,Osinnykh Igor^ORCID,Volodin Vladimir^ORCID,Milakhin Denis,Zhuravlev Konstantin^ORCID

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

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4. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications;Lingaparthi;Thin Solid Films,2020

5. Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD;Tungare;Thin Solid Films,2011

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1. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation;Surfaces and Interfaces;2024-08

2. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy;Materials;2024-06-14