In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications-Reference-Cited by-同舟云学术

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Published:2020-08 Issue: Volume:708 Page:138128
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lingaparthi R.^ORCID,Dharmarasu N.,Radhakrishnan K.^ORCID,Agrawal M.

Funder

Ministry of Education

MOE

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. Boosted Ultraviolet Electroluminescence of Ingan/Algan Quantum Structures Grown on High-Index Contrast Patterned Sapphire with Silica Array;Hu;Nano Energy,2020

5. High Quality Gan Buffer Layer by Isoelectronic Doping and Its Application to 365 nm Ingan/Algan Ultraviolet Light-Emitting Diodes;Zhou;Applied Surface Science,2019

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