Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation-Reference-Cited by-同舟云学术

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Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation

Published:2024-08 Issue: Volume:51 Page:104817
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Milakhin Denis^ORCID,Malin Timur^ORCID,Mansurov Vladimir^ORCID,Maidebura Yan^ORCID,Bashkatov Dmitriy^ORCID,Milekhin Ilya^ORCID,Goryainov Sergey^ORCID,Volodin Vladimir^ORCID,Loshkarev Ivan^ORCID,Vdovin Vladimir,Gutakovskii Anton,Ponomarev Sergei^ORCID,Zhuravlev Konstantin^ORCID

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Elsevier BV

Reference70 articles.

1. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Zhou;Nanoscale,2022

2. Monolayer-scale GaN/AlN multiple quantum wells for high power e-beam pumped UV-emitters in the 240–270 nm spectral range;Jmerik;Nanomaterials,2021

3. Monolithically integrating III-nitride quantum structure for full-spectrum white LED via bandgap engineering heteroepitaxial growth;Fan;Laser Photonics Rev,2023

4. 2D-GaN/AlN multiple quantum disks/quantum well heterostructures for high-power electron-beam pumped UVC emitters;Jmerik;Nanomaterials,2023

5. (Al, Ga) N-based quantum dots heterostructures on h-BN for UV-C emission;Zaiter;Nanomaterials,2023

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