Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD-Reference-Cited by-同舟云学术

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Published:2022-12 Issue:24 Volume:48 Page:36193-36200
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Chen Kai^ORCID,Zhang Yachao,Zhang Jincheng,Wang Xing,Yao Yixin,Ma Jinbang^ORCID,Hao Yue

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Intensive study of field-plated AlGaN/GaN HEMT on silicon substrate for high power RF applications;Kumar;Silicon,2022

2. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm-1 output power density;Ozaki;APEX,2021

3. Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications;Augustine Fletcher;Int. J. Electron. Commun.,2019

4. Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications;Arivazhagan;Int. J. Electron. Commun.,2019

5. Bendable microwave AlGaN/GaN high-electron-mobility transistor with output power density of 2.65 W/mm;Wang;IEEE Electron. Device Lett.,2021

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