Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications-Reference-Cited by-同舟云学术

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Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

Published:2019-08 Issue: Volume:108 Page:189-194
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Arivazhagan L.,Nirmal D.,Godfrey D.,Ajayan J.,Prajoon P.,Augustine Fletcher A.S.,Amir Anton Jone A.,Raj Kumar J.S.

Funder

Defence Research and Development Organization, India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference40 articles.

1. DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-Type SiC substrates;Ping;IEEE Electron Device Lett,1998

2. Trends in power semiconductor devices;Baliga;IEEE Trans Electron Dev,1996

3. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices;Chow;IEEE Trans Electron Devices,1994

4. Digital integrated circuits on an E-mode GaN power HEMT platform;Tang;IEEE Electron Dev Lett,2017

5. High uniformity normally OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure;Huang;IEEE Electron Dev Lett,2016

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical Modeling and Simulation Study of Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN HEMT Device;Lecture Notes in Electrical Engineering;2024

2. Design and Simulation of Enhancement-Mode Vertical Superjunction GaN HEMT with Improved Ron and Cut-Off Frequency;IETE Journal of Research;2023-10-29

3. A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications;Microelectronics Journal;2023-10

4. Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications;Physica Scripta;2023-09-14

5. Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer;Journal of Computational Electronics;2023-06-05

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