Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8015200/07974822.pdf?arnumber=7974822
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4. 350°C Operation of SiC Complementary JFET Logic Gates;2023 IEEE CPMT Symposium Japan (ICSJ);2023-11-15
5. Fully Integrated Galvanic Isolation Interface in GaN Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-11
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