Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8015200/07974822.pdf?arnumber=7974822
Cited by 72 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance;Applied Physics Letters;2024-07-15
2. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters;Applied Physics Letters;2024-06-10
3. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure;Applied Physics Letters;2024-06-10
4. A Novel E-Mode GaN p-MISFET with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
5. High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
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