Analytical Modeling and Simulation Study of Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN HEMT Device
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-6855-8_38
Reference11 articles.
1. Varghese A, Periasamy C, Bhargava L (2018) Analytical modeling and simulation-based investigation of AlGaN/AlN/GaN Bio-HEMT sensor for C-erbB-2 detection. IEEE Sens J 18(23):9595–9603
2. Arivazhagan L, Nirmal D, Godfrey D, Ajayan J, Prajoon P, Fletcher AA, Jone AAA, Kumar JR (2019) Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications. AEU-Int J Electron Commun 108:189–194
3. Shrestha NM, Li Y, Chang EY (2014) Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer. Jpn J Appl Phys 53(4S):04EF08
4. Malik A, Jain N, Mishra M, Kumar S, Rawal DS, Singh AK (2021) Analytical model to evaluate threshold voltage of GaN based HEMT involving nanoscale material parameters. Superlattices Microstruct 152:106834
5. Subramani NK, Couvidat J, Al Hajjar A, Nallatamby JC, Sommet R, Quéré R (2017) Identification of GaN buffer traps in microwave power AlGaN/GaN HEMTs through low frequency S-parameters measurements and TCAD-based physical device simulations. IEEE J Electron Devices Soc 5(3):175–181
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