Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations-Reference-Cited by-同舟云学术

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Published:2017-05 Issue:3 Volume:5 Page:175-181
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Subramani Nandha Kumar^ORCID,Couvidat Julien,Hajjar Ahmad Al,Nallatamby Jean-Christophe,Sommet Raphael,Quere Raymond

Funder

DEFIS-RF Project, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/7909049/07882709.pdf?arnumber=7882709

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