Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference35 articles.
1. The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
2. Design and optimization of thin film fully depleted vertical surrounding gate (VSG) MOSFETs for enhanced short channel immunity
3. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
4. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
5. Very-high power density AlGaN/GaN HEMTs
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1. Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side;Electronics;2024-02-04
2. Analytical Modeling and Simulation Study of Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN HEMT Device;Lecture Notes in Electrical Engineering;2024
3. MISHEMT intrinsic voltage gain under multiple channel output characteristics;Semiconductor Science and Technology;2023-09-22
4. Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer;Applied Physics B;2023-05-24
5. Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG);Solid-State Electronics;2023-03
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