Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer-Reference-Cited by-同舟云学术

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Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer

Published:2023-06-05 Issue:4 Volume:22 Page:1024-1030
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Dong Kexiu^ORCID,Zhang Yangyi,Wang Bingting,liu Yanli,Yu Wenjuan

Funder

the Natural Science Foundation of the Anhui Higher Education Institutions

the National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10825-023-02063-3.pdf

Reference21 articles.

1. Mishra, U.K., Parikh, P., Wu, Y.F.: AlGaN/GaN HEMTs-an overview of device operation and applications. Proc. IEEE 90, 1022–1031 (2002)

2. Kuzuhara, M., Tokuda, H.: Low-loss and high-voltage III-Nitride transistors for power switching applications. IEEE Trans. Electron. Dev. 62, 405–413 (2015)

3. Chiu, H.C., Liu, C.H., Huang, C.R., Chiu, C.C., Wang, H.C., Kao, H.L., Lin, S.Y., Chien, F.T.: Normally-off p-GaN gated AlGaN/GaN MIS-HEMTs with ALD-grown Al2O3/AlN composite gate insulator. Membranes 11, 727 (2021)

4. Frayssinet, E., Knap, W., Lorenzini, P., Grandjean, N., Massies, J., Skierbiszewski, C., Suski, T., Grzegory, I., Porowski, S., Simin, G., Hu, X., Khan, M.A., Shur, M.S., Gaska, R., Maude, D.: High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Appl. Phys. Lett. 77, 2551–2553 (2000)

5. Huang, Y., Li, J.P., Chen, W.Z., Wang, J., Xue, J.J., Cai, Q., Chen, D.J., Zhang, R.: High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design. Opt. Quantum Electron. 53, 139 (2021)

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