High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates-Reference-Cited by-同舟云学术

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Published:2000-10-16 Issue:16 Volume:77 Page:2551-2553
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Frayssinet E.,Knap W.,Lorenzini P.,Grandjean N.,Massies J.,Skierbiszewski C.,Suski T.,Grzegory I.,Porowski S.,Simin G.,Hu X.,Khan M. Asif,Shur M. S.,Gaska R.,Maude D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1318236

Reference14 articles.

1. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

3. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

4. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

5. Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

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