Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124153
Reference12 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
3. Electrical characterization of GaN p-n junctions with and without threading dislocations
4. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
5. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations
Cited by 141 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defect selective photoetching of GaN: Progress, applications and prospects;Progress in Crystal Growth and Characterization of Materials;2024-05
2. Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate;Advanced Materials Interfaces;2024-03-04
3. Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors;Nanoscale;2024
4. Self-organized porous semiconductor compounds;Encyclopedia of Condensed Matter Physics;2024
5. Plasma-free metal-assisted chemical etching producing three-dimensional gallium nitride structures;Journal of Materials Chemistry C;2023
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3