Defect selective photoetching of GaN: Progress, applications and prospects-Reference-Cited by-同舟云学术

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Defect selective photoetching of GaN: Progress, applications and prospects

Published:2024-05 Issue:2 Volume:70 Page:100623
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Weyher J.L.^ORCID,Kelly J.J.

Publisher

Elsevier BV

Reference74 articles.

1. Study of segregation inhomogeneities in GaAs by means of DSL photoetching and EBIC measurements;Frigeri;J. Electrochem. Soc.,1989

2. HBr-K2Cr2O7-H2O etching system for InP;Weyher;J. Crystal Growth,1994

3. The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy;Lewandowska;J. Crystal Growth,2007

4. Principles of electroless photoetching of non-uniformly doped GaN: kinetics and defect revealing;Weyher;J. Crystal Growth,2015

5. Ammonothermal and HVPE bulk growth of GaN;Kucharski,2021

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