Electrical characterization of GaN p-n junctions with and without threading dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122057
Reference9 articles.
1. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
2. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
4. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
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