Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365575
Reference22 articles.
1. GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
2. Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
3. III-N light emitting diodes fabricated using RF nitrogen gas source MBE
4. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
5. Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures
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