III-N light emitting diodes fabricated using RF nitrogen gas source MBE

Author:

Van Hove J.M.,Carpenter G.,Nelson E.,Wowchak A.,Chow P.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization;Materials Science and Engineering: B;2006-02

2. Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

3. Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals;Journal of Crystal Growth;1999-11

4. Nitridation of GaAs(001) surface: Auger electron spectroscopy and reflection high-energy electron diffraction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

5. Generation of atomic nitrogen flux monitoring by an atomic absorption detection system at 120 nm;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-01

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