Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19961335?crawler=true&mimetype=application/pdf
Reference6 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
3. Progress and prospects for GaN and the III–V nitride semiconductors
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1. Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2005-07-01
2. Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN;Applied Physics Letters;2005-01-24
3. Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and(0001¯)surfaces;Physical Review B;2004-01-28
4. Blue light‐emitting diodes grown by plasma‐assisted molecular beam epitaxy;physica status solidi (c);2003-11-24
5. Delayed nucleation during molecular-beam epitaxial growth of GaN observed by line-of-sight quadrupole mass spectrometry;Applied Physics Letters;2002-04
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