Blue light‐emitting diodes grown by plasma‐assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Blue light‐emitting diodes grown by plasma‐assisted molecular beam epitaxy

Published:2003-11-24 Issue:7 Volume: Page:2193-2197
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Sato Hitoshi¹,Waltereit Patrick¹,Green Daniel S.²,Poblenz Christiane¹,Katona Thomas²,DenBaars Steven P.¹²,Speck James S.¹,Tamura Hitoshi³,Funaoka Chihiro³

Affiliation:

1. Materials Department, College of Engineering, University of California, Santa Barbara, California 93106‐5050, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106‐5050, USA

3. R & D Center, Stanley Electric Co., Ltd. 1‐3‐1 Eda‐Nishi, Yokohama 225‐0014, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303299

Reference8 articles.

1. S.NakamuraandG.Fasol The Blue Laser Diodes (Springer‐Verlag Heidelberg 1997).

2. Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

3. Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy

4. Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures

5. Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

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