Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463701
Reference9 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Resonant cavity light‐emitting diode
3. Emission studies of InGaN layers and LEDs grown by plasma-assisted MBE
4. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
5. High-quality distributed Bragg reflectors based on AlxGa1−xN/GaN multilayers grown by molecular-beam epitaxy
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