The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)-Reference-Cited by-同舟云学术

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Published:1998-01 Issue:1-2 Volume:183 Page:23-30
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sanchez-Garcia M.A.,Calleja E.,Monroy E.,Sanchez F.J.,Calle F.,Muñoz E.,Beresford R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns

2. Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source

3. High‐quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

4. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

5. Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

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