High-quality distributed Bragg reflectors based on AlxGa1−xN/GaN multilayers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1401090
Reference12 articles.
1. Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser
2. A vertical cavity light emitting InGaN quantum well heterostructure
3. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
4. Growth of GaSb on GaAs/AlAs mirrors for 1.68 μm detectors
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3. Properties of an AlGaN/AlN distributed-Bragg-reflector structure;Journal of the Korean Physical Society;2014-10
4. High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO_2/Al_2O_3 passivation layers and TiO_2/Al_2O_3 DBR backside reflector;Optics Express;2013-09-05
5. High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel hybrid Ag mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector;Optical Engineering;2013-06-04
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