Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

Published:1999-07-15 Issue:Part 1, No. 7A Volume:38 Page:3976-3981
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mukai Takashi,Yamada Motokazu,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 741 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of the piezoelectric field in GaInN/GaN quantum wells and its impact on the device performance;Journal of Applied Physics;2024-08-15

2. Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN;Journal of Applied Physics;2024-07-22

3. Atom Probe Tomography Investigation of the Impact of Stacking Faults on InGaN/GaN Quantum Well LED Systems;Microscopy and Microanalysis;2024-07

4. Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: high pixel density arrays demonstration;Optics Express;2024-06-18

5. Crystal Quality and Efficiency Engineering of InGaN‐Based Red Light‐Emitting Diodes;physica status solidi (b);2024-05-28

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