Delayed nucleation during molecular-beam epitaxial growth of GaN observed by line-of-sight quadrupole mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1465530
Reference20 articles.
1. Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE
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4. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
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