Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy
Author:
Funder
Spanish MICINN and FEDER
Generalitat Valenciana
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
https://iopscience.iop.org/article/10.1088/1361-6528/ab5c15/pdf
Reference34 articles.
1. Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
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3. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
4. Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC
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