Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC-Reference-Cited by-同舟云学术

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Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC

Published:2017-12-11 Issue:50 Volume:9 Page:44001-44009
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Yu¹²³^ORCID,Cao Bing,Li Zongyao²,Cai Demin²,Zhang Yumin¹²³,Ren Guoqiang¹²,Wang Jianfeng¹²,Shi Lin¹,Wang Chinhua,Xu Ke¹²

Affiliation:

1. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China

2. Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, P. R. China

3. University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14494

Reference41 articles.

1. Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy

2. Epitaxial II–VI Tripod Nanocrystals: A Generalization of van der Waals Epitaxy for Nonplanar Polytypic Nanoarchitectures

3. Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates

4. Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica: A Demonstration of Epitaxial Growth Strategy

5. Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth

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1. Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask;Japanese Journal of Applied Physics;2024-02-05

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3. Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth;Crystal Growth & Design;2023-06-28

4. Applications of remote epitaxy and van der Waals epitaxy;Nano Convergence;2023-04-30

5. Influence of patterned graphene mask on nucleation behavior of GaN by MOCVD;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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