High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Published:2015 Issue:17 Volume:7 Page:7896-7905
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Xenogiannopoulou E.¹²,Tsipas P.¹²,Aretouli K. E.¹²,Tsoutsou D.¹²,Giamini S. A.¹²,Bazioti C.³⁴⁵,Dimitrakopulos G. P.³⁴⁵,Komninou Ph.³⁴⁵,Brems S.⁶⁷,Huyghebaert C.⁶⁷,Radu I. P.⁶⁷,Dimoulas A.¹²

Affiliation:

1. Institute of Nanoscience and Nanotechnology

2. Athens, Greece

3. Physics Department

4. Aristotle University of Thessaloniki

5. GR-54124 Thessaloniki, Greece

6. Imec

7. Leuven, Belgium

Abstract

Atomically thin MoSe₂ films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, and sizable semiconductor band gap for use in nanoelectronics.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR06874B

Reference41 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Graphene-Like Two-Dimensional Materials

3. Van der Waals heterostructures

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Photoinduced Switching of the Current through a Single Molecule: Effects of Surface Plasmon Excitations of the Leads

Cited by 131 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing the Linear/Nonlinear Optical Properties of MoSe₂ via Third-Generation Semiconductor Nanoheterojunctions for Nano-Optoelectronic Devices;ACS Applied Nano Materials;2024-09-10

2. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides;Chemical Reviews;2024-08-12

3. Molecular beam epitaxy and other large-scale methods for producing monolayer transition metal dichalcogenides;Journal of Physics: Condensed Matter;2024-06-27

4. A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures;Advanced Materials Interfaces;2024-05-02

5. Large area MoSe₂ and MoSe₂/Bi₂Se₃ films on sapphire (0001) for near-infrared photodetection;Nano Express;2024-04-22