GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

Published:1995-11-01 Issue:Part 2, No. 11A Volume:34 Page:L1429-L1431
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakai Hiromitsu,Koide Takashi,Suzuki Hiroyuki,Yamaguchi Machiko,Yamasaki Shiro,MasayoshiKoike ,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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