Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)-Reference-Cited by-同舟云学术

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Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)

Published:1997-07-01 Issue:1 Volume:39 Page:61-66
ISSN:0295-5075
Container-title:Europhysics Letters (EPL)
language:
Short-container-title:Europhys. Lett.

Author:

Themlin J.-M,Forbeaux I,Langlais V,Belkhir H,Debever J.-M

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/epl/i1997-00314-9/pdf

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin- and angle-resolved inverse photoemission setup with spin orientation independent from electron incidence angle;Review of Scientific Instruments;2022-09-01

2. Peculiar covalent bonding of C60/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy;Journal of Physics: Condensed Matter;2018-11-23

3. Giant ( 12×12 ) and ( 4×8 ) reconstructions of the 6H -SiC(0001) surface obtained by progressive enrichment in Si atoms;Physical Review B;2018-02-23

4. Electronic charge transfer contribution in adsorption of silicon at the SiC(0001) surface—A density functional theory (DFT) study;Applied Surface Science;2017-01

5. 7.3.1 Group-IV semiconductor surfaces;Physics of Solid Surfaces;2015

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