Electronic charge transfer contribution in adsorption of silicon at the SiC(0001) surface—A density functional theory (DFT) study-Reference-Cited by-同舟云学术

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Electronic charge transfer contribution in adsorption of silicon at the SiC(0001) surface—A density functional theory (DFT) study

Published:2017-01 Issue: Volume:393 Page:168-179
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sołtys Jakub,Piechota Jacek,Strak Paweł,Krukowski Stanisław

Funder

Poland’s National Science Center

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference59 articles.

1. Advances in silicon carbide electronics;Zolper;MRS Bull.,2005

2. Epitaxial growth and device processing of SiC on non-basal planes;Kimoto,2004

3. Heterocrystalline structures: new types of superlattices?;Bechstedt;Phys. Rev. Lett.,1995

4. SiC properties, http://www.ioffe.ru/SVA/NSM/Semicond/SiC/thermal.html (accessed 25.09.15).

5. Principles and limitations of numerical simulation of SiC boule growth by sublimation;Pons,2004

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