Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation-Reference-Cited by-同舟云学术

Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

Published:2006-05 Issue:7 Volume:203 Page:1607-1611
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Losurdo Maria,Giangregorio Maria M.,Bruno Giovanni,Kim Tong-Ho,Choi Soojeong,Brown April

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

2. The role of high-temperature island coalescence in the development of stresses in GaN films

3. Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy

4. Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen

5. Study of the interaction of 4H–SiC and 6H–SiC(0001)Si surfaces with atomic nitrogen

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