Initial stage of GaN nucleation on 30°-Ga reconstructed 4H-SiC()Si by molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Progress and prospects of group-III nitride semiconductors
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5. Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
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1. Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed 4H−SiC(0001‾) surface by ab-initio calculations;Vacuum;2022-11
2. First-principles study on reconstruction of 4H-SiC(0001) and (0001¯);Surface Science;2016-05
3. Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed in situ synchrotron X-ray diffraction;Applied Physics Letters;2016-01-04
4. Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy;Advances in Science and Technology;2010-10-27
5. Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE;physica status solidi (RRL) - Rapid Research Letters;2008-10
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