First-principles study on reconstruction of 4H-SiC(0001) and (0001¯)-Reference-Cited by-同舟云学术

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First-principles study on reconstruction of 4H-SiC(0001) and (0001¯)

Published:2016-05 Issue: Volume:647 Page:45-50
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kaneko Tomoaki,Yamasaki Takahiro,Tajima Nobuo,Ohno Takahisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference28 articles.

1. Functional surface reconstructions of hexagonal SiC

2. Structures and energetics for polar and nonpolar SiC surface relaxations

3. Multilayer relaxation features on (100) and (111) surfaces of β-SiC

4. Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

5. Ab initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoindentation of Nano-SiC/Si Hybrid Crystals and AlN, AlGaN, GaN, Ga2O3 Thin Films on Nano-SiC/Si;Mechanics of Solids;2024-04

2. Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed 4H−SiC(0001‾) surface by ab-initio calculations;Vacuum;2022-11

3. Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation;Japanese Journal of Applied Physics;2021-02-12

4. Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide from the Si- and C-Faces by Nanoindentation;Technical Physics Letters;2020-08

5. Density functional calculations for structures and energetics of atomic steps and their implication for surface morphology on Si-face SiC polar surfaces;Physical Review B;2020-05-19

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