Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mn>4</mml:mn><mml:mi mathvariant="bold">H</mml:mi><mml:mo linebreak="goodbreak" linebreakstyle="after">−</mml:mo><mml:mi mathvariant="bold">S</mml:mi><mml:mi mathvariant="bold">i</mml:mi><mml:mi mathvariant="bold">C</mml:mi><mml:mrow><mml:mo stretchy="true">(</mml:mo><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>‾</mml:mo></mml:mover><mml:mo stretchy="true">)</mml:mo></mml:mrow></mml:mrow></mml:math> surface by ab-initio calculations-Reference-Cited by-同舟云学术

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Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed 4H−SiC(0001‾) surface by ab-initio calculations

Published:2022-11 Issue: Volume:205 Page:111414
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Alao Ahmed Abubakar,Wu Weng-Ngai,Hsu Wen-Dung^ORCID

Funder

Ministry of Science and Technology, Taiwan

Ministry of Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference63 articles.

1. SIC power devices in power electronics: an overview;Alves,2017

2. SiC power devices—present status, applications and future perspective;Östling,2011

3. Silicon carbide and diamond for high temperature device applications;Willander;J. Mater. Sci. Mater. Electron.,2006

4. The status of SiC bulk growth from an industrial point of view;St G;J. Cryst. Growth,2000

5. Identification and control of SiC polytypes in PVT method;Lin;J. Mater. Sci. Mater. Electron.,2010

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-polishing characteristics in vibration-assisted CMP of single-crystal silicon carbide via molecular dynamics simulations;Materials Science in Semiconductor Processing;2023-09

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