Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371902
Reference26 articles.
1. Optical characterization of GaN/SiC n-p heterojunctions and p-SiC
2. Electrical characterization of GaN/SiC n-p heterojunction diodes
3. GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
4. Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy
5. Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
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