Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122920
Reference16 articles.
1. Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure Devices
2. Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE
3. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
4. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
5. Growth and Doping of GaN Directly on 6H-SiC by MBE
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microstructure of porous gallium nitride nanowall networks;Acta Materialia;2014-02
2. Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition;SPIE Proceedings;2007-02-08
3. Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC;Materials Science Forum;2006-10
4. Impact of 4H– and 6H–SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy;Applied Physics Letters;2006-07-10
5. Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality;Thin Solid Films;2004-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3