Electrical characterization of GaN/SiC n-p heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121058
Reference4 articles.
1. Silicon Carbide Electronic Materials and Devices
2. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
3. Plasma-Assisted MBE of GaN and AlGaN on 6H SiC(0001)
4. Analytic approximations for the Fermi energy of an ideal Fermi gas
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