Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3093700
Reference24 articles.
1. Metal organic vapour phase epitaxy of GaN and lateral overgrowth
2. Electronic structures of GaN edge dislocations
3. Luminescence properties of defects in GaN
4. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
5. Marker layers for the development of a multistep GaN FACELO process
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2. Exciton Effects in Low-Barrier GaN/AlGaN Quantum Wells;The Journal of Physical Chemistry C;2022-08-23
3. Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure;ACS Applied Electronic Materials;2021-12-04
4. Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2020-07-25
5. Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications;Journal of Nanoelectronics and Optoelectronics;2018-03-01
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