Exciton Effects in Low-Barrier GaN/AlGaN Quantum Wells-Reference-Cited by-同舟云学术

Exciton Effects in Low-Barrier GaN/AlGaN Quantum Wells

Published:2022-08-23 Issue:34 Volume:126 Page:14727-14734
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cretì Arianna¹^ORCID,Tobaldi David M.²^ORCID,Lomascolo Mauro¹^ORCID,Tarantini Iolena³,Esposito Marco²^ORCID,Passaseo Adriana²,Tasco Vittorianna²^ORCID

Affiliation:

1. CNR-IMM, Institute for Microelectronic and Microsystems, Campus Ecotekne, Via Monteroni, 73100 Lecce, Italy

2. CNR-Nanotec, Nanotechnology Institute, Campus Ecotekne, Via Monteroni, 73100 Lecce, Italy

3. Mathematics and Physics Department, University of Salento, Via Monteroni, 73100 Lecce, Italy

Funder

Ministero dell'Universit? e della Ricerca

InnovaPuglia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c04118

Reference37 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

3. LED revolution: fundamentals and prospects for UV disinfection applications

4. UV-LED disinfection of Coronavirus: Wavelength effect

5. The 2020 UV emitter roadmap

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