Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure-Reference-Cited by-同舟云学术

Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure

Published:2021-12-04 Issue:12 Volume:3 Page:5451-5458
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Tobaldi David Maria¹^ORCID,Triminì Valentina¹,Cretì Arianna²^ORCID,Lomascolo Mauro²,Dicorato Stefano³,Losurdo Maria¹³,Passaseo Adriana¹,Tasco Vittorianna¹^ORCID

Affiliation:

1. Nanotechnology Institute, CNR-Nanotec, Via Monteroni, Lecce 73100, Italy

2. Institute for Microelectronic and Microsystems, CNR-IMM, Via Monteroni, Lecce 73100, Italy

3. Dipartimento di Chimica, Università di Bari, via Orabona 4, Bari 70126, Italy

Funder

Ministero dell'Istruzione, dell'Universit?? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00894

Reference36 articles.

1. High efficiency GaN-based LEDs and lasers on SiC

2. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

3. Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- ${k}$ Passivation Layer and High Acceptor Density in Buffer Layer

4. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

5. Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

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1. Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation;Chemical Engineering Journal;2024-01

2. AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer;CrystEngComm;2024

3. First-principles calculations of electronic structure, optical and thermodynamic properties of GaBN2, Ga3BN4 and GaB3N4 nitrides;Vacuum;2023-02

4. Exciton Effects in Low-Barrier GaN/AlGaN Quantum Wells;The Journal of Physical Chemistry C;2022-08-23