Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation-Reference-Cited by-同舟云学术

Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation

Published:2024-01 Issue: Volume:479 Page:147652
ISSN:1385-8947
Container-title:Chemical Engineering Journal
language:en
Short-container-title:Chemical Engineering Journal

Author:

Wang Xurui,Li Hongyan^ORCID,Liu Hongli,Cao Kai,Xia Shilei,Zhong Yong,Yang Taisheng

Funder

National Natural Science Foundation of China

Tianjin Research Innovation Project for Postgraduate Students

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,Environmental Chemistry,General Chemistry

Reference73 articles.

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4. Low-temperature and ammonia-free epitaxy of the GaN/AlGaN/GaN heterostructure;Tobaldi;ACS Appl. Electron. Mater.,2021

5. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures;Guillén-Cervantes;Appl. Surf. Sci.,2011

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