Marker layers for the development of a multistep GaN FACELO process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
2. Importance of Nonradiative Recombination Processes in Violet/UV InGaN Light Emitting Diodes
3. Epitaxial Lateral Overgrowth of GaN
4. Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure
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2. Optimisation of trench filling in GaN towards vertical HEMT structures;Journal of Crystal Growth;2022-06
3. The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN;Applied Physics Letters;2022-01-17
4. Growth evolution of polar-plane-free faceted GaN structures on (11 2 ¯2) and ( 1 ¯ 1 ¯2 2 ¯) GaN substrates;Journal of Applied Physics;2021-04-28
5. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03
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