The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
2. Adroit Materials, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Funder
National Science Foundation
Army Research Laboratory
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0077628
Reference30 articles.
1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
3. A 271.8 nm deep-ultraviolet laser diode for room temperature operation
4. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates
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