Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures-Reference-Cited by-同舟云学术

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Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures

Published:2022-12-22 Issue:1 Volume:23 Page:263-272
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Manglano Clavero Irene¹²^ORCID,Margenfeld Christoph¹²^ORCID,Hartmann Jana¹²,Waag Andreas¹²

Affiliation:

1. Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106Braunschweig, Germany

2. Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, D-38106Braunschweig, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00989

Reference53 articles.

1. Solid-State Lighting

2. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

3. GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

4. Commercial GaN-Based Power Electronic Systems: A Review

5. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A strategy to grow three dimensional InGaN/GaN heterostructure exclusively on non-polar m-plane of two-step etched GaN nanorods;Applied Surface Science;2024-05

2. Diffusion-Limited Crystal Growth of Gallium Nitride Using Active Machine Learning;Crystal Growth & Design;2024-03-12

3. Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model;Crystal Growth & Design;2023-11-28

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