Joint effect of miscut <i>r</i>-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar <i>a</i>-plane GaN films-Reference-Cited by-同舟云学术

Joint effect of miscut r-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar a-plane GaN films

Published:2023 Issue:41 Volume:25 Page:5834-5841
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Fang Ruiting¹,Zhang Xiong¹²^ORCID,Wang Shuchang³,Luo Xuguang¹,Xu Shenyu¹,Xu Yifeng¹,Lou Zhiyi¹,Chen Lin¹⁴,Hu Guohua¹

Affiliation:

1. Advanced Photonics Center, Southeast University, Nanjing, Jiangsu, 210096, People's Republic of China

2. Engineering Research Center of New Light Sources Technology and Equipment, Ministry of Education, Southeast University, Nanjing, Jiangsu, 210096, People's Republic of China

3. Changshu Institute of Technology, Changshu, Jiangsu, 215500, People's Republic of China

4. Jinling Institute of Technology, Nanjing, Jiangsu, 211169, People's Republic of China

Abstract

High-quality non-polar a-plane GaN films are achieved with optimized miscut r-plane sapphire substrate and nucleation layers.

Funder

Fundamental Research Funds for the Central Universities

Jiangsu Provincial Department of Science and Technology

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00478C

Reference35 articles.

1. Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

2. Demonstration of N-Polar III-Nitride Tunnel Junction LED

3. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

4. Polarity Control in Group-III Nitrides beyond Pragmatism

5. High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate