High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate
Author:
Affiliation:
1. Advanced Photonics Center, Southeast University, Nanjing 210096, Jiangsu, China
2. Laboratory of Optoelectronic Materials and Detection Technology, Guangxi University, Nanning 530004, Guangxi, China
Funder
Science and Technology Department of Jiangsu Province
Jiangsu Province
Graduate School, Southeast University
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b00283
Reference22 articles.
1. Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy
2. Raman spectra of isotopic GaN
3. Resonant Raman scattering of TO(A1), TO(E1) and E2 optical phonons in GaN
4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
5. Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
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