Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Abstract

Nonpolar (11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition (MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3 × 1018 cm−3, a high Mg activation efficiency of 6.5%, an activation energy of 114 meV for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990 °C. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.